TK9J90E,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 9A TO3P
$2.92
Available to order
Reference Price (USD)
1+
$3.18000
25+
$2.55360
100+
$2.32680
500+
$1.88410
1,000+
$1.58900
Exquisite packaging
Discount
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Meet the TK9J90E,S1E by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TK9J90E,S1E stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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