TN6719A_D27Z
onsemi
onsemi
TRANS NPN 300V 0.2A TO226
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the TN6719A_D27Z Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The TN6719A_D27Z is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-226
Related Products
Microchip Technology
JANTX2N3740
onsemi
PN200_D75Z
onsemi
KSA708CYBU
Fairchild Semiconductor
KSC5021RTU
Rohm Semiconductor
BCW31T116
NXP USA Inc.
BC807-40W/ZL135
NXP USA Inc.
BC56-16PAS115
Infineon Technologies
IKP15N65H5XKSA1718
onsemi
KSA940H1TU
Toshiba Semiconductor and Storage