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TP0101K-T1-E3

Vishay Siliconix
TP0101K-T1-E3 Preview
Vishay Siliconix
MOSFET P-CH 20V 0.58A SOT23-3
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 580mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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