TP65H015G5WS
Transphorm
Transphorm
650 V 95 A GAN FET
$35.14
Available to order
Reference Price (USD)
1+
$35.14000
500+
$34.7886
1000+
$34.4372
1500+
$34.0858
2000+
$33.7344
2500+
$33.383
Exquisite packaging
Discount
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The TP65H015G5WS from Transphorm sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Transphorm's TP65H015G5WS for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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