TP65H035G4WS
Transphorm
Transphorm
GANFET N-CH 650V 46.5A TO247-3
$19.54
Available to order
Reference Price (USD)
1+
$19.54000
500+
$19.3446
1000+
$19.1492
1500+
$18.9538
2000+
$18.7584
2500+
$18.563
Exquisite packaging
Discount
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Upgrade your designs with the TP65H035G4WS by Transphorm, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TP65H035G4WS is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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