TP65H035WS
Transphorm
Transphorm
GANFET N-CH 650V 46.5A TO247-3
$21.76
Available to order
Reference Price (USD)
1+
$19.47000
10+
$17.70000
30+
$16.37267
120+
$15.04500
270+
$13.71752
510+
$12.83251
Exquisite packaging
Discount
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The TP65H035WS by Transphorm is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Transphorm for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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