TP65H050WS
Transphorm
Transphorm
GANFET N-CH 650V 34A TO247-3
$19.24
Available to order
Reference Price (USD)
1+
$16.19000
10+
$14.72000
30+
$13.61600
120+
$12.51200
270+
$11.40800
510+
$10.67200
Exquisite packaging
Discount
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Enhance your electronic projects with the TP65H050WS single MOSFET from Transphorm. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Transphorm's TP65H050WS for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 119W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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