TP65H070LDG-TR
Transphorm
Transphorm
650 V 25 A GAN FET
$12.98
Available to order
Reference Price (USD)
1+
$12.98000
500+
$12.8502
1000+
$12.7204
1500+
$12.5906
2000+
$12.4608
2500+
$12.331
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TP65H070LDG-TR by Transphorm is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TP65H070LDG-TR is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (8x8)
- Package / Case: 3-PowerDFN
Related Products
Infineon Technologies
IPP80N08S406AKSA1
STMicroelectronics
STH140N6F7-2
Rohm Semiconductor
R6524KNZ4C13
Vishay Siliconix
SI2303CDS-T1-E3
Taiwan Semiconductor Corporation
TSM160N10LCR RLG
Vishay Siliconix
IRFZ44RPBF
STMicroelectronics
STU65N3LLH5
Texas Instruments
CSD23382F4T
Vishay Siliconix
SQ2362ES-T1_GE3
Microchip Technology