TP65H150G4PS
Transphorm
Transphorm
GAN FET N-CH 650V TO-220
$6.24
Available to order
Reference Price (USD)
1+
$6.24030
500+
$6.177897
1000+
$6.115494
1500+
$6.053091
2000+
$5.990688
2500+
$5.928285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the TP65H150G4PS by Transphorm, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TP65H150G4PS stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Transphorm.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Renesas Electronics America Inc
RJK03K6DPA-00#J5A
Renesas Electronics America Inc
2SK1589(0)-T1B-A
Diodes Incorporated
DMP1011LFVQ-13
Taiwan Semiconductor Corporation
TSM500N15CS RLG
Renesas
UPA1740TP-E1-AZ
onsemi
NVTYS029N08HLTWG
Micro Commercial Co
MSJP11N65A-BP
Renesas Electronics America Inc
2SK1582-T2B-A
Harris Corporation
RFP8N18L
onsemi