Shopping cart

Subtotal: $0.00

TPAR3D S1G

Taiwan Semiconductor Corporation
TPAR3D S1G Preview
Taiwan Semiconductor Corporation
DIODE AVALANCHE 200V 3A TO277A
$1.09
Available to order
Reference Price (USD)
1,500+
$0.25041
3,000+
$0.22832
7,500+
$0.21359
10,500+
$0.20622
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 120 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 58pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Infineon Technologies

BAW78DH6327XTSA1

Diotec Semiconductor

SBT1840-3G

Vishay General Semiconductor - Diodes Division

B240A-E3/61T

Diodes Incorporated

B120Q-13-F

Diotec Semiconductor

FE2A

Taiwan Semiconductor Corporation

TST20U60C

Vishay General Semiconductor - Diodes Division

MMBD914-HE3-18

Rohm Semiconductor

RF201LAM2STR

Top