TPC6010-H(TE85L,FM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 6.1A VS-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the TPC6010-H(TE85L,FM single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TPC6010-H(TE85L,FM combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
IRFR2405PBF
Infineon Technologies
IPB70N04S406
Alpha & Omega Semiconductor Inc.
AOU7S60
Infineon Technologies
IRLI2203N
Infineon Technologies
IPB80N06S208ATMA1
Infineon Technologies
IRLU4343PBF
Infineon Technologies
IRF7759L2TR1PBF
Infineon Technologies
IPW50R199CP
Infineon Technologies
IRF1503PBF
Infineon Technologies