TPCA8102(TE12L,Q,M
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 40A 8SOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the TPCA8102(TE12L,Q,M from Toshiba Semiconductor and Storage, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TPCA8102(TE12L,Q,M ensures reliable performance in demanding environments. Upgrade your circuit designs with Toshiba Semiconductor and Storage's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
Panjit International Inc.
PJP6NA70_T0_00001
Diodes Incorporated
DMS3012SFG-7
Renesas Electronics America Inc
2SJ245L-E
Infineon Technologies
IRFH5302DTR2PBF
Infineon Technologies
IPA60R120P7E8191XKSA1
IXYS
IXTD3N50P-2J
Renesas Electronics America Inc
NE5550979A-T1A-A
onsemi
IRFI740BTU
Infineon Technologies
IPP60R190C3
Infineon Technologies