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TPCA8109(TE12L1,V

Toshiba Semiconductor and Storage
TPCA8109(TE12L1,V Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 24A 8SOP
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Vgs (Max): +20V, -25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN

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