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TPCC8136.LQ

Toshiba Semiconductor and Storage
TPCC8136.LQ Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 9.4A 8TSON
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 18W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN

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