TPCF8B01(TE85L,F,M
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2.7A VS-8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TPCF8B01(TE85L,F,M from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's TPCF8B01(TE85L,F,M for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 330mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-8 (2.9x1.5)
- Package / Case: 8-SMD, Flat Lead
Related Products
IXYS
IXFR32N50Q
Alpha & Omega Semiconductor Inc.
AO4435_103
Rohm Semiconductor
RSR020P05TL
NXP USA Inc.
2N7002BKV/DG/B2115
Microsemi Corporation
APT40M70LVFRG
Diodes Incorporated
DMP3017SFK-7
Renesas Electronics America Inc
2SJ486ZU-TL-E
Infineon Technologies
SP000683158
Infineon Technologies
AUIRLR3105
STMicroelectronics