TPH3206LDGB
Transphorm
Transphorm
GANFET N-CH 650V 16A PQFN
$0.00
Available to order
Reference Price (USD)
1+
$10.80000
10+
$9.72000
60+
$8.85600
120+
$7.99200
300+
$7.34400
540+
$6.69600
1,020+
$6.04800
Exquisite packaging
Discount
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Enhance your electronic projects with the TPH3206LDGB single MOSFET from Transphorm. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Transphorm's TPH3206LDGB for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 3-PowerDFN
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