TPH3206LSB
Transphorm
Transphorm
GANFET N-CH 650V 16A PQFN
$0.00
Available to order
Reference Price (USD)
1+
$10.80000
10+
$9.72000
60+
$8.85600
120+
$7.99200
300+
$7.34400
540+
$6.69600
1,020+
$6.04800
Exquisite packaging
Discount
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The TPH3206LSB single MOSFET from Transphorm is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the TPH3206LSB is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 3-PowerDFN
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