TPH3206LSGB
Transphorm
Transphorm
GANFET N-CH 650V 16A 3PQFN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TPH3206LSGB from Transphorm redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TPH3206LSGB offers the precision and reliability you need. Trust Transphorm to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (8x8)
- Package / Case: 3-PowerDFN
Related Products
onsemi
FDWS9408-F085
Diodes Incorporated
DMJ70H601SV3
Vishay Siliconix
SI5479DU-T1-GE3
Renesas Electronics America Inc
2SJ197-D-T2-AZ
Harris Corporation
RFP14N06L
Vishay Siliconix
IRFPS40N60K
Fairchild Semiconductor
HUF76629D3STR4885
Vishay Siliconix
SQM120N04-1M4L_GE3
Microsemi Corporation
2N7225
Microsemi Corporation