TPH3208LDG
Transphorm
Transphorm
GANFET N-CH 650V 20A 3PQFN
$10.81
Available to order
Reference Price (USD)
1+
$11.35000
10+
$10.21500
60+
$9.30700
120+
$8.39900
300+
$7.71800
540+
$7.03700
1,020+
$6.35600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TPH3208LDG from Transphorm sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Transphorm's TPH3208LDG for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (8x8)
- Package / Case: 3-PowerDFN
Related Products
IXYS
IXTY10P15T
Nexperia USA Inc.
BUK969R3-100E,118
Rectron USA
RM90N40DF
Rohm Semiconductor
R6046ANZ1C9
IXYS
IXFB52N90P
onsemi
RFD14N05SM9A
Infineon Technologies
IAUC60N04S6L039ATMA1
onsemi
FDMS7660AS
onsemi
NTTFS5C453NLTAG
Infineon Technologies