Shopping cart

Subtotal: $0.00

TPH3208LS

Transphorm
TPH3208LS Preview
Transphorm
GANFET N-CH 650V 20A 3PQFN
$0.00
Available to order
Reference Price (USD)
1+
$12.25000
10+
$11.02500
60+
$10.04500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
  • Vgs (Max): ±18V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PQFN (8x8)
  • Package / Case: 3-PowerDFN

Related Products

NXP USA Inc.

PHP32N06LT,127

Infineon Technologies

AUIRLR3705Z

Taiwan Semiconductor Corporation

TSM2301CX RFG

Vishay Siliconix

IRFR9310

STMicroelectronics

STU85N3LH5

Toshiba Semiconductor and Storage

2SK3342(TE16L1,NQ)

Diodes Incorporated

ZVNL120C

Vishay Siliconix

IRL640

Top