TPH3208LSG
Transphorm
Transphorm
GANFET N-CH 650V 20A 3PQFN
$0.00
Available to order
Reference Price (USD)
1+
$11.35000
10+
$10.21500
60+
$9.30700
120+
$8.39900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the TPH3208LSG by Transphorm, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TPH3208LSG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Transphorm.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (8x8)
- Package / Case: 3-PowerDFN
Related Products
Infineon Technologies
BSS87 E6433
STMicroelectronics
STB60NE06L-16T4
Vishay Siliconix
SQ2360EES-T1-GE3
Harris Corporation
IRFP350
Microchip Technology
MIC94030YM4-TR
onsemi
NTD65N03R-001
EPC
EPC2049ENGRT
Infineon Technologies
IPI120P04P404AKSA1
IXYS
IXTF03N400
Panasonic Electronic Components