TPN1600ANH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 100V 17A 8TSON-ADV
$0.95
Available to order
Reference Price (USD)
5,000+
$0.21000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TPN1600ANH,L1Q by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TPN1600ANH,L1Q is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 42W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
Related Products
Microchip Technology
APT6010LLLG
Diodes Incorporated
DMP3098L-7
Diodes Incorporated
DMG4407SSS-13
Vishay Siliconix
SQW61N65EF-GE3
Diodes Incorporated
DMN3060LCA3-7
Vishay Siliconix
SQA410EJ-T1_GE3
Renesas Electronics America Inc
RJK03C0DPA-00#J53
Vishay Siliconix
SI4056DY-T1-GE3
STMicroelectronics
STP360N4F6
Alpha & Omega Semiconductor Inc.