TPS1101D
Texas Instruments
Texas Instruments
MOSFET P-CH 15V 2.3A 8SOIC
$2.81
Available to order
Reference Price (USD)
1+
$2.56000
10+
$2.31000
75+
$2.06253
150+
$1.85627
525+
$1.44375
1,050+
$1.19625
2,550+
$1.15500
Exquisite packaging
Discount
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Upgrade your designs with the TPS1101D by Texas Instruments, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TPS1101D is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 15 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
- Vgs (Max): +2V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 791mW (Ta)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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