TPS1120DR
Texas Instruments
Texas Instruments
MOSFET 2P-CH 15V 1.17A 8-SOIC
$2.20
Available to order
Reference Price (USD)
2,500+
$0.90580
Exquisite packaging
Discount
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The TPS1120DR by Texas Instruments is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the TPS1120DR provides reliable operation under stringent conditions. Texas Instruments's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 15V
- Current - Continuous Drain (Id) @ 25°C: 1.17A
- Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 840mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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