TPW2R508NH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR DOS
$1.24
Available to order
Reference Price (USD)
1+
$1.23750
500+
$1.225125
1000+
$1.21275
1500+
$1.200375
2000+
$1.188
2500+
$1.175625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the TPW2R508NH,L1Q by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TPW2R508NH,L1Q stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Comchip Technology
CMS07P10V8-HF
Renesas Electronics America Inc
2SK3354-Z-E1
Harris Corporation
RF1S630SM
STMicroelectronics
STD3N65M6
Diodes Incorporated
DMT8008LFG-13
Fairchild Semiconductor
FDM606P
Renesas Electronics America Inc
2SK1587-T1-AZ
UnitedSiC
UJ4C075044K3S
Harris Corporation
IRFD323
Micro Commercial Co