TRS12E65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DODE SCHOTTKY 650V TO220
$5.86
Available to order
Reference Price (USD)
1+
$5.86000
500+
$5.8014
1000+
$5.7428
1500+
$5.6842
2000+
$5.6256
2500+
$5.567
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the TRS12E65F,S1Q single rectifier diode by Toshiba Semiconductor and Storage, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The TRS12E65F,S1Q is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Toshiba Semiconductor and Storage's TRS12E65F,S1Q for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 90 µA @ 650 V
- Capacitance @ Vr, F: 65pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
Related Products
Taiwan Semiconductor Corporation
TSS43U RGG
Diotec Semiconductor
SM4006
onsemi
SS24T3G
Panjit International Inc.
MER2DMB_R2_00601
Vishay General Semiconductor - Diodes Division
UF1005-E3/54
Vishay General Semiconductor - Diodes Division
V20PWM45HM3/I
Vishay General Semiconductor - Diodes Division
V8PL6-M3/86A
Diodes Incorporated
S3J-13-F
Diotec Semiconductor
SK3H10
Diotec Semiconductor