TRS20N65FB,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SIC SBD TO-247 V=650 IF=12A
$6.81
Available to order
Reference Price (USD)
1+
$6.81000
500+
$6.7419
1000+
$6.6738
1500+
$6.6057
2000+
$6.5376
2500+
$6.4695
Exquisite packaging
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The TRS20N65FB,S1Q from Toshiba Semiconductor and Storage sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Toshiba Semiconductor and Storage's rigorous quality control ensures the TRS20N65FB,S1Q maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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