TRS4E65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F DIODE TO-220-2L V=650 IF=4A
$2.53
Available to order
Reference Price (USD)
1+
$2.53000
500+
$2.5047
1000+
$2.4794
1500+
$2.4541
2000+
$2.4288
2500+
$2.4035
Exquisite packaging
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The TRS4E65F,S1Q by Toshiba Semiconductor and Storage is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The TRS4E65F,S1Q is also used in smart home devices and wearable technology, ensuring seamless operation. Toshiba Semiconductor and Storage's expertise in semiconductor technology guarantees that the TRS4E65F,S1Q delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 650 V
- Capacitance @ Vr, F: 16pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
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