TSC5802DCHC5G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
TRANS NPN 450V 2.5A TO251
$0.00
Available to order
Reference Price (USD)
5,625+
$0.22680
Exquisite packaging
Discount
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The TSC5802DCHC5G Bipolar Junction Transistor (BJT) by Taiwan Semiconductor Corporation is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the TSC5802DCHC5G provides consistent performance in demanding applications. Choose Taiwan Semiconductor Corporation for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2.5 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 600mA, 2A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
- Power - Max: 30 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TO-251 (IPAK)
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