TSC966CT B0G
Taiwan Semiconductor Corporation

Taiwan Semiconductor Corporation
TRANS NPN 400V 0.3A TO92
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Enhance your circuit designs with the TSC966CT B0G Bipolar Junction Transistor (BJT) from Taiwan Semiconductor Corporation. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The TSC966CT B0G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Taiwan Semiconductor Corporation to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92