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TSM015NA03CR RLG

Taiwan Semiconductor Corporation
TSM015NA03CR RLG Preview
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 205A 8PDFN
$0.00
Available to order
Reference Price (USD)
2,500+
$0.69580
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4243 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5x6)
  • Package / Case: 8-PowerTDFN

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