TSM1NB60SCT A3
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 500MA TO92
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The TSM1NB60SCT A3 from Taiwan Semiconductor Corporation sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Taiwan Semiconductor Corporation's TSM1NB60SCT A3 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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