TSM200N03DPQ33 RGG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET 2 N-CH 30V 20A 8PDFN
$0.73
Available to order
Reference Price (USD)
5,000+
$0.17429
10,000+
$0.16828
Exquisite packaging
Discount
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Elevate your electronics with the TSM200N03DPQ33 RGG from Taiwan Semiconductor Corporation, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the TSM200N03DPQ33 RGG provides the reliability and efficiency you need. Taiwan Semiconductor Corporation's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
- Power - Max: 20W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PDFN (3x3)
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