Shopping cart

Subtotal: $0.00

TSM2311CX-01 RFG

Taiwan Semiconductor Corporation
TSM2311CX-01 RFG Preview
Taiwan Semiconductor Corporation
MOSFET P-CH 20V 4A SOT23
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 6 V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Renesas Electronics America Inc

NP80N055NDG-S18-AY

Vishay Siliconix

SI8809EDB-T2-E1

Renesas Electronics America Inc

NP90N055MUK-S18-AY

Infineon Technologies

64-4095PBF

Infineon Technologies

AUXDKG4PC40S-E

Infineon Technologies

IRFU024NPBFAKLA1

Infineon Technologies

AUIRFSL8405-306TRL

Top