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TSM3N80CZ C0G

Taiwan Semiconductor Corporation
TSM3N80CZ C0G Preview
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 3A TO220
$0.00
Available to order
Reference Price (USD)
1+
$1.98000
10+
$1.78900
100+
$1.43740
500+
$1.11800
2,000+
$0.89441
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 696 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

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