TSM3N90CH C5G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 2.5A TO251
$0.00
Available to order
Reference Price (USD)
1+
$1.44000
10+
$1.27300
100+
$1.00570
500+
$0.77996
1,875+
$0.61575
3,750+
$0.57470
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TSM3N90CH C5G by Taiwan Semiconductor Corporation is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TSM3N90CH C5G is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 748 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Infineon Technologies
AUIRF6218S
UnitedSiC
UF3SC065040D8S
Infineon Technologies
IPDH5N03LA G
Infineon Technologies
IPI80N06S4L05AKSA2
Vishay Siliconix
SI2321DS-T1-E3
onsemi
NTD20P06LG
Alpha & Omega Semiconductor Inc.
AO4478
Infineon Technologies
IRFR7546PBF
onsemi
HUFA76443P3
Infineon Technologies