TSM4N80CZ C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 4A TO220
$0.00
Available to order
Reference Price (USD)
1+
$1.71000
10+
$1.54300
100+
$1.23980
500+
$0.96426
1,000+
$0.79895
3,000+
$0.77140
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the TSM4N80CZ C0G single MOSFET from Taiwan Semiconductor Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Taiwan Semiconductor Corporation's TSM4N80CZ C0G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 38.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
HUFA76432P3
Vishay Siliconix
SIA448DJ-T1-GE3
Vishay Siliconix
SQ3427EEV-T1-GE3
STMicroelectronics
STF11N52K3
Vishay Siliconix
SI4336DY-T1-E3
onsemi
FDMC8878_F126
IXYS
IXFX66N50Q2
Infineon Technologies
IPD50N06S409ATMA1
Diodes Incorporated
BS170PSTOA
onsemi