TSM4N90CI C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 4A ITO220AB
$0.00
Available to order
Reference Price (USD)
1+
$1.94000
10+
$1.75600
100+
$1.41140
500+
$1.09778
1,000+
$0.90959
3,000+
$0.87822
Exquisite packaging
Discount
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The TSM4N90CI C0G from Taiwan Semiconductor Corporation sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Taiwan Semiconductor Corporation's TSM4N90CI C0G for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 38.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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