TSM4ND65CI
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 650V 4A ITO220
$1.19
Available to order
Reference Price (USD)
1+
$1.14000
50+
$0.91500
100+
$0.80070
500+
$0.62092
1,000+
$0.49020
2,500+
$0.45752
Exquisite packaging
Discount
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The TSM4ND65CI by Taiwan Semiconductor Corporation is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TSM4ND65CI is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 41.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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