TSM60NC390CI C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
600V, 11A, SINGLE N-CHANNEL POWE
$7.15
Available to order
Reference Price (USD)
1+
$7.15000
500+
$7.0785
1000+
$7.007
1500+
$6.9355
2000+
$6.864
2500+
$6.7925
Exquisite packaging
Discount
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Optimize your power electronics with the TSM60NC390CI C0G single MOSFET from Taiwan Semiconductor Corporation. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TSM60NC390CI C0G combines cutting-edge technology with Taiwan Semiconductor Corporation's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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