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TSM6N60CH C5G

Taiwan Semiconductor Corporation
TSM6N60CH C5G Preview
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 6A TO251
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1248 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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