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TSM9N90ECZ C0G

Taiwan Semiconductor Corporation
TSM9N90ECZ C0G Preview
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 900V 9A TO220
$0.00
Available to order
Reference Price (USD)
1+
$2.99000
10+
$2.69900
100+
$2.16880
500+
$1.68682
1,000+
$1.39766
3,000+
$1.34946
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

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