TTA006B,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER TRANSISTOR TO-126N PC
$0.41
Available to order
Reference Price (USD)
1+
$0.40844
500+
$0.4043556
1000+
$0.4002712
1500+
$0.3961868
2000+
$0.3921024
2500+
$0.388018
Exquisite packaging
Discount
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Optimize your electronic systems with the TTA006B,Q Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the TTA006B,Q delivers superior performance in diverse environments. Toshiba Semiconductor and Storage's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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