TTA1713-GR,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 45V 0.5A SMINI
$0.06
Available to order
Reference Price (USD)
1+
$0.05607
500+
$0.0555093
1000+
$0.0549486
1500+
$0.0543879
2000+
$0.0538272
2500+
$0.0532665
Exquisite packaging
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Enhance your circuit designs with the TTA1713-GR,LF Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The TTA1713-GR,LF is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Toshiba Semiconductor and Storage to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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