TW015N65C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 650V SIC-MOSFET TO-247 15MOH
$58.09
Available to order
Reference Price (USD)
1+
$58.09000
500+
$57.5091
1000+
$56.9282
1500+
$56.3473
2000+
$55.7664
2500+
$55.1855
Exquisite packaging
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Discover the TW015N65C,S1F from Toshiba Semiconductor and Storage, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TW015N65C,S1F ensures reliable performance in demanding environments. Upgrade your circuit designs with Toshiba Semiconductor and Storage's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 11.7mA
- Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 342W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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