TW045N120C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 45MO
$24.84
Available to order
Reference Price (USD)
1+
$24.84000
500+
$24.5916
1000+
$24.3432
1500+
$24.0948
2000+
$23.8464
2500+
$23.598
Exquisite packaging
Discount
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The TW045N120C,S1F single MOSFET from Toshiba Semiconductor and Storage is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the TW045N120C,S1F is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5V @ 6.7mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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