UF3C065080K3S
UnitedSiC
UnitedSiC
MOSFET N-CH 650V 31A TO247-3
$8.74
Available to order
Reference Price (USD)
1+
$8.74000
500+
$8.6526
1000+
$8.5652
1500+
$8.4778
2000+
$8.3904
2500+
$8.303
Exquisite packaging
Discount
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Upgrade your designs with the UF3C065080K3S by UnitedSiC, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the UF3C065080K3S is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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