UF3C120080K3S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 33A TO247-3
$15.92
Available to order
Reference Price (USD)
1+
$15.92000
500+
$15.7608
1000+
$15.6016
1500+
$15.4424
2000+
$15.2832
2500+
$15.124
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the UF3C120080K3S single MOSFET from UnitedSiC. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the UF3C120080K3S combines cutting-edge technology with UnitedSiC's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 254.2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IWM013N06NM5XUMA1
Infineon Technologies
IMZA65R107M1HXKSA1
Toshiba Semiconductor and Storage
SSM3K16FS,LF
Vishay Siliconix
SIHA15N80AE-GE3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJS7328A-F2-0000HF
onsemi
NTMFS5C460NL
Renesas Electronics America Inc
NE5510279A-T1-A
Infineon Technologies
IPI90N06S404AKSA2
Diodes Incorporated
DMJ65H430SCTI
Diodes Incorporated