UF3SC065030B7S
UnitedSiC
UnitedSiC
650V/30MOHM, SIC, STACKED FAST C
$19.54
Available to order
Reference Price (USD)
1+
$19.54000
500+
$19.3446
1000+
$19.1492
1500+
$18.9538
2000+
$18.7584
2500+
$18.563
Exquisite packaging
Discount
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The UF3SC065030B7S from UnitedSiC redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the UF3SC065030B7S offers the precision and reliability you need. Trust UnitedSiC to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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