UF3SC065030D8S
UnitedSiC
UnitedSiC
SICFET N-CH 650V 18A 4DFN
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The UF3SC065030D8S by UnitedSiC is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose UnitedSiC for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN (8x8)
- Package / Case: 4-PowerTSFN
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